The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Sep. 29, 2011
Xiaoyue Huang, Eden Prairie, MN (US);
Lijuan Zou, Eden Prairie, MN (US);
Yongjun Zhao, Eden Prairie, MN (US);
Michael Kautzky, Eagan, MN (US);
Xiaoyue Huang, Eden Prairie, MN (US);
Lijuan Zou, Eden Prairie, MN (US);
Yongjun Zhao, Eden Prairie, MN (US);
Michael Kautzky, Eagan, MN (US);
Seagate Technology LLC, Cupertino, CA (US);
Abstract
Disclosed herein is a method for fabricating an optical device that includes depositing an etch stop material to form an etch stop layer, wherein the etch stop material has a refractive index in the infrared wavelength range, n; depositing a core material to form a core layer, wherein the core material has a refractive index in the infrared wavelength range, n; and etching the core layer using a halide based etch process, wherein the etch stop material has an etch rate in the halide based etch process and the core material has an etch rate in the halide based etch process, wherein the etch rate of the core material is at least about five times higher than the etch rate of the etch stop material, and wherein nis not greater than n.