The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Sep. 21, 2011
Applicants:

Michael Campbell, Geneva, CH;

Thilo Michel, Nürnberg, DE;

Jan Jakubek, Hyskov, CZ;

Inventors:

Michael Campbell, Geneva, CH;

Thilo Michel, Nürnberg, DE;

Jan Jakubek, Hyskov, CZ;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); G01T 1/29 (2006.01); H01L 27/146 (2006.01); H01L 31/08 (2006.01); H01L 31/115 (2006.01);
U.S. Cl.
CPC ...
G01T 1/2985 (2013.01); G01T 1/242 (2013.01); G01T 1/247 (2013.01); G01T 1/249 (2013.01); H01L 27/14661 (2013.01); H01L 31/085 (2013.01); H01L 31/115 (2013.01);
Abstract

The present invention relates to a pixel detector (), comprising a semiconductor sensor layer (), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer () connected to said semiconductor layer (), said read-out electronics layer () comprising an array of read-out circuits () for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (). The neighboring read-out circuits () are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighboring read-out circuits (). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighboring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.


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