The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Mar. 11, 2014
The United States of America As Represented BY the Administrator of Nasa, Washington, DC (US);
Jing Li, San Jose, CA (US);
Richard T. Wilkins, College Station, TX (US);
James J. Hanratty, San Francisco, CA (US);
Yijiang Lu, San Jose, CA (US);
Abstract
System and method for monitoring receipt and estimating flux value, in real time, of incident radiation, using two or more nanostructures (NSs) and associated terminals to provide closed electrical paths and to measure one or more electrical property change values ΔEPV, associated with irradiated NSs, during a sequence of irradiation time intervals. Effects of irradiation, without healing and with healing, of the NSs, are separately modeled for first order and second order healing. Change values ΔEPV are related to flux, to cumulative dose received by NSs, and to radiation and healing effectivity parameters and/or μ, associated with the NS material and to the flux. Flux and/or dose are estimated in real time, based on EPV change values, using measured ΔEPV values. Threshold dose for specified changes of biological origin (usually undesired) can be estimated. Effects of time-dependent radiation flux are analyzed in pre-healing and healing regimes.