The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9297850 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 29, 2016

Filed:

Sep. 15, 2014
Applicant:

Mie Fujitsu Semiconductor Limited, Kuwana, JP;

Inventors:

Lawrence T. Clark, Phoenix, AZ (US);

Richard S. Roy, Dublin, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G01R 31/26 (2014.01); G01R 35/00 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2607 (2013.01); G01R 35/00 (2013.01); G11C 7/1006 (2013.01); G11C 7/1051 (2013.01); G11C 7/1078 (2013.01);
Abstract

A memory test method is disclosed that can include providing at least one first switch of at least one test element coupled to a first memory section between a first node within a tested section and an intermediate node, coupling a test switch of the test element between the intermediate node and a forced voltage node, and coupling a second switch of the test element between the intermediate node and a second node; wherein the forced voltage node receives a forced voltage substantially the same as a voltage applied to the second node, and the second node is coupled to at least a second memory section.


Find Patent Forward Citations

Loading…