The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Apr. 05, 2013
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/04 (2006.01); H01L 21/66 (2006.01); G01N 27/12 (2006.01); G01N 33/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/041 (2013.01); G01N 27/125 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); G01N 2033/0095 (2013.01);
Abstract
A method for determining the oxygen concentration of a sample made from p-type semiconductor material includes a thermal treatment step to form the thermal donors, a measuring step of the charge carrier concentration of the sample at a temperature between 0 K and 100 K, a step of determining the thermal donor concentration of the sample from the charge carrier concentration and the temperature of the sample, and a step of determining the interstitial oxygen concentration from the thermal donor concentration.