The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Sep. 28, 2010
Applicants:

Toru Kinoshita, Ibaraki, JP;

Kazuya Takada, Tokyo, JP;

Inventors:

Toru Kinoshita, Ibaraki, JP;

Kazuya Takada, Tokyo, JP;

Assignee:

Tokuyama Corporation, Yamaguchi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01); C30B 29/40 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
C30B 29/403 (2013.01); C30B 25/183 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 33/007 (2013.01);
Abstract

A layered body having a single crystal layer including a group III nitride having a composition AlGaInN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate. The layered body includes an initial single crystal layer that includes the group III nitride composition, an oxygen concentration of 1×10cmor more and 5×10cm−3 or less and a thickness of 15 nm or more and 40 nm or less on the sapphire substrate and a second group III nitride single crystal layer including the group III nitride composition and having a reduced oxygen concentration than the initial single crystal layer.


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