The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Nov. 07, 2012
Applicant:

Hy-power Nano Inc., Brampton, CA;

Inventors:

Hadi K Mahabadi, Mississauga, CA;

Juan-Pablo Bravo-Vasquez, Edmonton, CA;

Sinoj Abraham, Edmonton, CA;

Guibun Ma, Edmonton, CA;

Nathan Gerein, Saint Albert, CA;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F21V 9/04 (2006.01); F21V 9/06 (2006.01); G02B 5/22 (2006.01); G02B 5/26 (2006.01); C01G 19/02 (2006.01); G02B 1/00 (2006.01); H01B 1/08 (2006.01); C01G 19/00 (2006.01); G02B 5/20 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); C03C 17/00 (2006.01); C01G 17/02 (2006.01); C01G 21/02 (2006.01);
U.S. Cl.
CPC ...
C01G 19/02 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); C01G 19/00 (2013.01); C03C 17/007 (2013.01); G02B 1/002 (2013.01); G02B 5/206 (2013.01); G02B 5/208 (2013.01); H01B 1/08 (2013.01); C01P 2002/72 (2013.01); C01P 2002/76 (2013.01); C01P 2004/03 (2013.01); C01P 2004/20 (2013.01); C01P 2004/32 (2013.01); C01P 2004/51 (2013.01); C01P 2004/62 (2013.01); C01P 2004/64 (2013.01); C01P 2006/80 (2013.01); C03C 2217/231 (2013.01); C03C 2218/114 (2013.01); G02B 2207/101 (2013.01);
Abstract

Disclosed herein are indium-tin-oxide nanoparticles and a method for continuously producing precipitated indium-tin nanoparticles having a particle size range of substantially from about 10 nm to about 200 nm and a substantially consistent ratio of indium to tin in the resultant nanoparticles across the duration of the continuous process, based on the ratio of indium to tin in a seeding solution. The method comprises preparing intermediate indium and tin compounds of the general formula [M(OH)C], where M represents the indium or tin ionic component of indium or tin salts, C represents the cationic component of indium or tin salt(s), x is a number greater than 0 and y=[M*valance−x]/C* valance in the seeding solution. The intermediate compounds are continuously precipitated with a base solution in a reaction vessel initially having a solvent contained therein. The method also provides a means for controlling the shape of the resultant nanoparticles. The resultant indium-tin nanoparticles may be further processed into dispersions.


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