The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
May. 11, 2015
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Haki Cebi, Allston, MA (US);
Fikret Altunkilic, North Andover, MA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/04 (2006.01); H03K 17/16 (2006.01); H01L 21/77 (2006.01); H03K 17/693 (2006.01); H01L 21/8234 (2006.01); H01L 49/02 (2006.01); H03K 17/687 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); H01L 21/77 (2013.01); H01L 21/823475 (2013.01); H01L 28/75 (2013.01); H03K 17/6871 (2013.01); H03K 17/693 (2013.01); H01L 27/1203 (2013.01);
Abstract
Semiconductor devices and methods are disclosed including switch circuitry providing improved switching performance. A semiconductor die includes a semiconductor substrate, at least one field-effect transistor (FET) formed on the semiconductor substrate, and a compensation circuit connected to a respective source of each of the at least one FET, the compensation circuit configured to compensate a non-linearity effect generated by the at least one FET.