The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Sep. 27, 2013
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Ziv Alon, Thousand Oaks, CA (US);
Shiaw Wen Chang, Thousand Oaks, CA (US);
Andre Metzger, Newbury Park, CA (US);
Assignee:
SKYWORKS SOLUTIONS, INC., Woburn, MA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04B 1/04 (2006.01); H03F 3/193 (2006.01); H03F 1/02 (2006.01); H03F 1/30 (2006.01); H03F 3/195 (2006.01);
U.S. Cl.
CPC ...
H03F 3/1935 (2013.01); H03F 1/0261 (2013.01); H03F 1/30 (2013.01); H03F 1/302 (2013.01); H03F 3/195 (2013.01); H03F 2200/18 (2013.01); H03F 2200/447 (2013.01); H03F 2200/451 (2013.01);
Abstract
A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.