The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Apr. 11, 2011
Applicants:

Herbert Brunner, Sinzing, DE;

Hans-christoph Gallmeier, Regensburg, DE;

Simon Jerebic, Tegernheim, DE;

Stephan Preuβ, Bad Abbach, DE;

Hansjörg Schöll, Bad Abbach, DE;

Inventors:

Herbert Brunner, Sinzing, DE;

Hans-Christoph Gallmeier, Regensburg, DE;

Simon Jerebic, Tegernheim, DE;

Stephan Preuβ, Bad Abbach, DE;

Hansjörg Schöll, Bad Abbach, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/60 (2010.01); H01L 33/00 (2010.01); H01L 33/46 (2010.01); H01L 33/56 (2010.01); H01L 33/48 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 33/005 (2013.01); H01L 33/46 (2013.01); H01L 33/56 (2013.01); H01L 33/486 (2013.01); H01L 33/508 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An optoelectronic component comprising an optoelectronic semiconductor chip () having a contact side () and a radiation coupling-out side () situated opposite; a chip carrier (), on which the semiconductor chip () is applied via its contact side (); a radiation conversion element () applied on the radiation coupling-out side (); and a reflective potting compound (), which is applied on the chip carrier () and laterally encloses the semiconductor chip () and the radiation conversion element (); wherein the potting compound () adjoins an upper edge of the radiation conversion element () in a substantially flush fashion, such that a top side of the radiation conversion element () is free of the potting compound ().


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