The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Apr. 01, 2013
Applicant:
Epistar Corporation, Hsinchu, TW;
Inventors:
De-Shan Kuo, Hsinchu, TW;
Ting-Chia Ko, Hsinchu, TW;
Chun-Hsiang Tu, Hsinchu, TW;
Po-Shun Chiu, Hsinchu, TW;
Assignee:
EPISTAR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01); H01L 33/42 (2010.01); H01L 33/22 (2010.01); H01L 33/00 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/42 (2013.01); H01L 33/405 (2013.01); H01L 33/0095 (2013.01); H01L 33/22 (2013.01); H01L 33/40 (2013.01);
Abstract
A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.