The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Jul. 05, 2012
Takayoshi Takano, Saitama, JP;
Takuya Mino, Osaka, JP;
Norimichi Noguchi, Saitama, JP;
Kenji Tsubaki, Osaka, JP;
Hideki Hirayama, Saitama, JP;
Takayoshi Takano, Saitama, JP;
Takuya Mino, Osaka, JP;
Norimichi Noguchi, Saitama, JP;
Kenji Tsubaki, Osaka, JP;
Hideki Hirayama, Saitama, JP;
PANASONIC CORPORATION, Osaka, JP;
RIKEN, Saitama, JP;
Abstract
In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.