The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Jun. 11, 2013
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Joachim Hertkorn, Alteglofsheim, DE;
Lorenzo Zini, Regensburg, DE;
Jan-Philipp Ahl, Regensburg, DE;
Alexander Frey, Regensburg, DE;
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Abstract
In at least one embodiment, the method is designed to produce an optoelectronic semiconductor chip. The method includes at least the following steps in the stated sequence: A) providing a growth substrate with a growth side, B) depositing at least one nucleation layer based on AlGaONon the growth side, C) depositing and structuring a masking layer, D) optionally growing a GaN-based seed layer in regions on the nucleation layer not covered by the masking layer, E) partially removing the nucleation layer and/or the seed layer in regions not covered by the masking layer or applying a second masking layer on the nucleation layer or on the seed layer in the regions not covered by the masking layer, and F) growing an AlInGaN-based semiconductor layer sequence with at least one active layer.