The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Sep. 18, 2013
Globalfoundries Inc., Grand Cayman, KY;
Shafaat Ahmed, Yorktown Heights, NY (US);
Hariklia Deligianni, Tenafly, NJ (US);
Qiang Huang, Sleepy Hollow, NY (US);
Lubomyr T. Romankiw, Briarcliff Manor, NY (US);
Raman Vaidyanathan, White Plains, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claima chalcogenide absorber layer is formed on the substrate.