The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Aug. 14, 2013
Applicant:
Kromek Limited, Sedgefield, GB;
Inventors:
Mohamed Ayoub, Sedgefield, GB;
Ian Radley, Sedgefield, GB;
Assignee:
Kromek Limited, Sedgefield, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01T 1/26 (2006.01); H01L 31/115 (2006.01); G01T 1/24 (2006.01); H01L 31/0296 (2006.01); H01L 31/0304 (2006.01); H01L 31/032 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/115 (2013.01); G01T 1/24 (2013.01); H01L 31/02966 (2013.01); H01L 31/032 (2013.01); H01L 31/0304 (2013.01); H01L 31/03046 (2013.01); H01L 31/18 (2013.01); H01L 31/184 (2013.01); H01L 31/1832 (2013.01); H01L 31/1844 (2013.01);
Abstract
A semiconductor detector device comprising: a detector element comprising at least one active detector layer of piezoelectric semiconductor material; a stress inducing element arranged to act in use on the detector element to generate therein a predetermined pattern of stress, and consequently a predetermined electrical field via the piezoelectric effect. A method of fabrication and of operation of a semiconductor detector device embodying these principles are also described.