The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Oct. 22, 2012
Ams Ag, Unterpremstätten, AT;
Ingrid Jonak-Auer, Graz, AT;
Jordi Teva, Eindhoven, NL;
AMS AG, Unterpremstaetten, AT;
Abstract
A lateral avalanche photodiode device comprises a semiconductor substrate () having a trench () with side walls () extending from a main surface () to a rear surface (). A first doped region () is present at the side walls of the trench, and a second doped region () is arranged at a distance from the first doped region. A third doped region () is located adjacent to the first doped region, extends through the substrate from the main surface to the rear surface, and is arranged between the first doped region and the second doped region. The third doped region () is the avalanche multiplication region of the photodiode structure. The second doped region and the third doped region have a first type of conductivity, and the first doped region has a second type of conductivity which is opposite to the first type of conductivity. The region of the substrate that is between the first doped region and the second doped region is of the first type of conductivity.