The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Nov. 20, 2012
Applicants:

Mehrdad M. Moslehi, Los Altos, CA (US);

Michael Wingert, Milpitas, CA (US);

Inventors:

Mehrdad M. Moslehi, Los Altos, CA (US);

Michael Wingert, Milpitas, CA (US);

Assignee:

Solexel, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/05 (2014.01); H01L 31/0725 (2012.01); H01L 31/02 (2006.01); H01L 27/142 (2014.01); H02S 40/32 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0516 (2013.01); H01L 27/1421 (2013.01); H01L 31/02021 (2013.01); H01L 31/022441 (2013.01); H01L 31/0504 (2013.01); H01L 31/0725 (2013.01); H02S 40/32 (2014.12); Y02E 10/50 (2013.01);
Abstract

A back contact solar cell comprises an active semiconductor absorber for use in a back contact solar cell having a light capturing front side and a backside opposite the light capturing front side. A first interdigitated metallization is positioned over the backside of the active semiconductor absorber. The first interdigitated metallization forming base and emitter contact metallization of the back contact solar cell. A backplane is positioned over the backside of the active semiconductor absorber and the first interdigitated metallization. A second interdigitated metallization is positioned over the backplane. The second interdigitated metallization is connected to the first interdigitated metallization for extracting photovoltaic power from the active semiconductor absorber. The second interdigitated metallization has base and emitter busbars over the backplane for electrical connection. An electronic component is electrically connected to at least a base busbar and at least an emitter busbar of the second interdigitated metallization. The electronic component has a bypass switch.


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