The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Aug. 03, 2012
Min-seok OH, Yongin-si, KR;
Doo-youl Lee, Yongin-si, KR;
Young-jin Kim, Yongin-si, KR;
Min Park, Yongin-si, KR;
Yun-seok Lee, Yongin-si, KR;
Nam-kyu Song, Yongin-si, KR;
Dong-seop Kim, Yongin-si, KR;
Cho-young Lee, Yongin-si, KR;
Chan-bin MO, Yongin-si, KR;
Young-su Kim, Yongin-si, KR;
Hoon-ha Jeon, Yongin-si, KR;
Yeon-ik Jang, Yongin-si, KR;
Jun-ki Hong, Yongin-si, KR;
Young-sang Park, Yongin-si, KR;
Chan-yoon Jung, Yongin-si, KR;
Min-Seok Oh, Yongin-si, KR;
Doo-Youl Lee, Yongin-si, KR;
Young-Jin Kim, Yongin-si, KR;
Min Park, Yongin-si, KR;
Yun-Seok Lee, Yongin-si, KR;
Nam-Kyu Song, Yongin-si, KR;
Dong-Seop Kim, Yongin-si, KR;
Cho-Young Lee, Yongin-si, KR;
Chan-Bin Mo, Yongin-si, KR;
Young-Su Kim, Yongin-si, KR;
Hoon-Ha Jeon, Yongin-si, KR;
Yeon-Ik Jang, Yongin-si, KR;
Jun-Ki Hong, Yongin-si, KR;
Young-Sang Park, Yongin-si, KR;
Chan-Yoon Jung, Yongin-si, KR;
Intellectual Keystone Technology LLC, McLean, VA (US);
Abstract
A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate.