The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Aug. 18, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Shintaro Nakano, Kawasaki, JP;
Tomomasa Ueda, Yokohama, JP;
Kentaro Miura, Kawasaki, JP;
Nobuyoshi Saito, Oota, JP;
Tatsunori Sakano, Kawasaki, JP;
Yuya Maeda, Kawasaki, JP;
Masaki Atsuta, Yokosuka, JP;
Hajime Yamaguchi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor element includes a semiconductor layer, a first and a second conductive unit, a gate electrode, and a gate insulating film. The semiconductor layer includes a first portion, a second portion, and a third portion provided between the first portion and the second portion. The first conductive unit is electrically connected to the first portion. The second conductive unit is electrically connected to the second portion. The gate electrode is separated from the first conductive unit, the second conductive unit, and the third portion. The gate electrode opposes the third portion. The gate insulating film is provided between the third portion and the gate electrode. A concentration of nitrogen of the first portion is higher than a concentration of nitrogen of the third portion. A concentration of nitrogen of the second portion is higher than the concentration of nitrogen of the third portion.