The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Jul. 01, 2011
Hiroyuki Uchiyama, Musashimurayama, JP;
Hironori Wakana, Hitachi, JP;
Hiroyuki Uchiyama, Musashimurayama, JP;
Hironori Wakana, Hitachi, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Disclosed is a technique for suppressing fluctuation of device characteristics in thin film transistors using an oxide semiconductor film as a channel layer. In a thin film transistor using an oxide semiconductor film as a channel layer (), said channel layer () is configured from an oxide semiconductor having as main materials a zinc oxide and tin oxide with introduced group IV elements or group V elements, wherein the ratio (A/B) of the impurity concentration (A) of the group IV elements or group V elements contained in the channel layer () and the impurity concentration (B) of the group III elements contained in the channel layer () satisfies A/B≦1.0, and ideally A/B≦0.3.