The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Nov. 02, 2011
Xiangdong Chen, Irvine, CA (US);
Henry Chen, Irvine, CA (US);
Agnes Woo, Encino, CA (US);
Wei Xia, Irvine, CA (US);
Xiangdong Chen, Irvine, CA (US);
Henry Chen, Irvine, CA (US);
Agnes Woo, Encino, CA (US);
Wei Xia, Irvine, CA (US);
BROADCOM CORPORATION, Irvine, CA (US);
Abstract
Disclosed are various embodiments of FinFET semiconductor devices. A pair of matched capacitors can be formed that share a common source, drain and/or channel. Accordingly, the capacitance characteristics of each capacitor can be manufactured such that they are similar to one another. A resistor manufactured by employing FinFET techniques is also described. The resistor can be manufactured with an effective length that is greater than a distance traversed along a substrate by the resistor.