The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Sep. 01, 2011
Akio Iwabuchi, Niiza, JP;
Hironori Aoki, Niiza, JP;
Akio Iwabuchi, Niiza, JP;
Hironori Aoki, Niiza, JP;
SANKEN ELECTRIC CO., LTD., Niiza-Shi, Saitama, JP;
Abstract
The operation of a HEMT is monitored on an on-chip basis without increasing the power consumption rate. In a semiconductor device, an electron supply layeris formed on a channel layer. A two-dimensional electron gas (2DEG) layeris formed at the side of the channel layer of the hetero-junction interface. Electrons flow through the 2DEG layerbetween a source electrodeformed on the surface of the electron supply layerand a drain electrodethat is formed on the same surface. A potential detection electrodeis arranged on the electron supply layerbetween the gate electrodeand the source electrode. A resistorhaving a sufficiently high resistance value makes the electric current flowing to the potential detection electrodenegligible relative to the drain current in operation.