The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Jan. 27, 2014
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventor:
Jungmin Ko, Fremont, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/02532 (2013.01); H01L 21/3083 (2013.01); H01L 21/30604 (2013.01); H01L 21/6831 (2013.01); H01L 21/6875 (2013.01); H01J 37/32357 (2013.01); H01L 21/67109 (2013.01);
Abstract
Embodiments of the present invention may include a semiconductor patterning method involving forming a fin on a substrate, where the fin may have a sloped sidewall. The fin may be characterized by an initial height and a first width measured proximate a midpoint of the initial height. The method may include forming a masking layer above the fin, and the method may involve removing a first portion of the masking layer. The method may include decreasing the first width of the fin while maintaining the initial height.