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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9293562 B1

PDFFull Text
Date of Patent:
Mar. 22, 2016

Filed:

Jun. 02, 2015

Semiconductor device and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Kenichi Yamamoto, Kawasaki, JP;

Hiromi Sasaki, Kawasaki, JP;

Tomotake Morita, Kawasaki, JP;

Masashige Moritoki, Kawasaki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Hoai V Pham

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/283 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66568 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/283 (2013.01); H01L 21/28035 (2013.01); H01L 21/31111 (2013.01); H01L 21/823425 (2013.01); H01L 29/0847 (2013.01); H01L 29/41783 (2013.01); H01L 29/4925 (2013.01); H01L 29/66477 (2013.01); H01L 29/66628 (2013.01); H01L 29/78 (2013.01); H01L 29/7834 (2013.01); H01L 21/823418 (2013.01); H01L 21/823468 (2013.01); H01L 21/823814 (2013.01); H01L 27/088 (2013.01);
Abstract

To improve performance of a semiconductor device. Over a semiconductor substrate, a gate electrode is formed via a first insulating film for a gate insulating film, and a second insulating film extends from over a side wall of the gate electrode to over the semiconductor substrate. Over the semiconductor substrate in a part exposed from the second insulating film, a semiconductor layer, which is an epitaxial layer for source/drain, is formed. The second insulating film has a part extending over the side wall of the gate electrode and a part extending over the semiconductor substrate, and a part of the semiconductor layer lies over the second insulating film in the part extending over the semiconductor substrate.

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