The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Oct. 23, 2012
Applicants:

Sumitomo Electric Industries, Ltd., Osaka-shi, JP;

National University Corporation Nara Institute of Science and Technology, Ikoma-shi, JP;

Inventors:

Takeyoshi Masuda, Osaka, JP;

Tomoaki Hatayama, Ikoma, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/3065 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/3065 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); H01L 29/045 (2013.01); H01L 29/1608 (2013.01);
Abstract

A silicon carbide layer includes a first region having a first conductivity type, a second region provided on the first region and having a second conductivity type, and a third region provided on the second region and having the first conductivity type. A trench having an inner surface is formed in the silicon carbide layer. The trench penetrates the second and third regions. The inner surface of the trench has a first side wall and a second side wall located deeper than the first side wall and having a portion made of the second region. Inclination of the first side wall is smaller than inclination of the second side wall.


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