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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9293525 B1

PDFFull Text
Date of Patent:
Mar. 22, 2016

Filed:

Aug. 11, 2014

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Akihiro Jonishi, Matsumoto, JP;

Masaharu Yamaji, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., , JP;

Attorney:

Rossi, Kimms & McDowell LLP

Primary Examiner:

Christine Enad

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/761 (2006.01); H01L 21/265 (2006.01); H01L 21/74 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/063 (2013.01); H01L 21/26513 (2013.01); H01L 21/74 (2013.01); H01L 21/761 (2013.01); H01L 29/0646 (2013.01); H01L 29/404 (2013.01);
Abstract

A semiconductor device includes a high voltage isolation structure having a double RESURF structure. The high voltage isolation structure separates a low potential region from a high potential region. The high voltage isolation structure has an annular strip shape in a plan view and includes a straight portion and a corner portion which is connected to the straight portion. In the high voltage isolation structure, a p-type RESURF region is formed in a surface layer of a front surface of a substrate in an n-type well region along the outer circumference of the n-type well region. In the corner portion, the total amount of impurities per unit area in the RESURF region is less than that in the straight portion.

Find Patent Forward Citations

Jonishi, Akihiro. (2016). Semiconductor device and method of manufacturing semiconductor device (U.S. Patent No. 9293525). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9293525

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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