The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Feb. 05, 2015
Hangzhou Haicun Information Technology Co. Ltd., HangZhou, CN;
Guobiao Zhang, Corvallis, OR (US);
Bin Yu, HangZhou, CN;
HongYu Yu, ShenZhen, CN;
Jin He, Beijing, CN;
JinFeng Kang, Beijing, CN;
ZhiWei Liu, ChengDu, CN;
HangZhou HaiCun Information Technology Co., Ltd., HangZhou, ZheJiang, CN;
Other;
Abstract
The present invention discloses a small-grain three-dimensional memory (3D-MSG). Each of its memory cells comprises a thin-film diode with critical dimension no larger than 40 nm. The thin-film diode comprises at least a small-grain material, whose grain size G is substantially smaller than the diode size D. The small-grain material is preferably a nano-crystalline material or an amorphous material. The critical dimension f of the small-grain diode is smaller than the critical dimension F of the single-crystalline transistor.