The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Oct. 07, 2011
Yoshitaka Sasago, Tokyo, JP;
Masaharu Kinoshita, Tokyo, JP;
Yoshitaka Sasago, Tokyo, JP;
Masaharu Kinoshita, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A memory cell array having such a structure that can be realized with a simpler process and ideal for realizing a higher density is provided. Memory cells have a structure in which channel layers (and) are formed on the side surfaces of each of a plurality of stacked structures which extends in the Y direction and is periodically formed in the X direction with a gate insulator film layer () interposed, and a resistance-change material layer () is formed so as to be electrically connected to two adjacent channel layers of the channel layers. Due to such a structure, it is not necessary to perform such a very difficult step that processes the resistance-change material and the silicons collectively and it is possible to provide the memory cell array with a simpler process.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile