The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Feb. 22, 2011
Mitsuhito Mase, Hamamatsu, JP;
Akira Sakamoto, Hamamatsu, JP;
Takashi Suzuki, Hamamatsu, JP;
Tomohiro Yamazaki, Hamamatsu, JP;
Yoshimaro Fujii, Hamamatsu, JP;
Mitsuhito Mase, Hamamatsu, JP;
Akira Sakamoto, Hamamatsu, JP;
Takashi Suzuki, Hamamatsu, JP;
Tomohiro Yamazaki, Hamamatsu, JP;
Yoshimaro Fujii, Hamamatsu, JP;
HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A semiconductor light detecting element is provided with a silicon substrate having a semiconductor layer, and an epitaxial semiconductor layer grown on the semiconductor layer and having a lower impurity concentration than the semiconductor layer; and conductors provided on a surface of the epitaxial semiconductor layer. A photosensitive region is formed in the epitaxial semiconductor layer. Irregular asperity is formed at least in a surface opposed to the photosensitive region in the semiconductor layer. The irregular asperity is optically exposed.