The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

May. 05, 2014
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Swarnal Borthakur, Boise, ID (US);

Marc Sulfridge, Boise, ID (US);

Mitchell J. Mooney, Star, ID (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14632 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H01L 27/14687 (2013.01); H04N 5/3692 (2013.01);
Abstract

An image sensor wafer may be stacked on top of a digital signal processor (DSP) wafer. The image sensor wafer may include multiple image sensor dies, whereas the DSP wafer may include multiple DSP dies. The stacked wafers may be cut along scribe line regions to dice the wafers into individual components. Each image sensor die may include through-oxide vias (TOVs) that extend at least partially into a corresponding DSP die. Scribe line support structures may be formed surrounding the scribe line regions. The scribe line support structures and the TOVs may be formed during the same processing step. The TOVs can also be formed through deep trench isolation structures.


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