The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Nov. 05, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Sung-Kun Park, Gyeonggi-do, KR;
Young-Jun Kwon, Gyeonggi-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/792 (2006.01); H01L 29/788 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/336 (2006.01); H01L 27/115 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 27/11519 (2013.01); H01L 29/42324 (2013.01); H01L 29/7881 (2013.01);
Abstract
A nonvolatile memory device includes a tunneling region and an erase region formed over a substrate, a selection gate formed over the substrate to overlap with the tunneling region, a floating gate formed over the substrate to be disposed adjacent to the selection gate with a gap therebetween and to overlap with the tunneling region and the erase region, and a charge blocking layer filling the gap.
Park, Sung-Kun. (2016). Nonvolatile memory device (U.S. Patent No. 9293468). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9293468
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