The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Sep. 11, 2014
Applicant:
John V. Veliadis, Hanover, MD (US);
Inventor:
John V. Veliadis, Hanover, MD (US);
Assignee:
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 27/098 (2006.01); H01L 21/8232 (2006.01); H01L 29/808 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/098 (2013.01); H01L 21/8232 (2013.01); H01L 29/0619 (2013.01); H01L 29/8083 (2013.01);
Abstract
A monolithic bi-directional device provides bi-directional power flow and bi-directional blocking of high-voltages. The device includes a first transistor having a first drain formed over a first channel layer that overlays a substrate, and a second transistor that includes a second drain formed over a second channel layer that overlays the substrate. The substrate forms a common source for both the first transistor and the second transistor.