The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
May. 11, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Eun-Ji Kim, Seoul, KR;
Sung-Dong Cho, Hwaseong-si, KR;
Hyoung-Yol Mun, Yongin-si, KR;
Yeong-Lyeol Park, Yongin-si, KR;
Seung-Taek Lee, Bucheon-si, KR;
Abstract
Semiconductor devices including a protection pattern for reducing galvanic corrosion and methods of forming the semiconductor devices are provided. The semiconductor devices may include a substrate including a keep out zone (KOZ) and a plurality of interconnections, which may be disposed outside of the KOZ on the substrate. The semiconductor devices may also include a through silicon via (TSV) in the KOZ. The TSV may pass through the substrate. The semiconductor device may further include a protection pattern, which may be electrically insulated from the TSV, may be disposed in the KOZ and may include a different conductive material from the TSV. A lower end of the protection pattern may be disposed at a level higher than a lower end of the TSV.