The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Jan. 13, 2011
Applicants:

Yuusaku Ishimine, Kyoto, JP;

Masayuki Moriyama, Kyoto, JP;

Kenji Komatsubara, Kyoto, JP;

Inventors:

Yuusaku Ishimine, Kyoto, JP;

Masayuki Moriyama, Kyoto, JP;

Kenji Komatsubara, Kyoto, JP;

Assignee:

KYOCERA Corporation, Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/15 (2006.01); H05K 7/20 (2006.01); H05K 1/00 (2006.01); B32B 33/00 (2006.01); H01L 23/13 (2006.01); H01L 35/32 (2006.01); C04B 35/587 (2006.01); C04B 37/02 (2006.01); H05K 1/03 (2006.01); H05K 3/38 (2006.01);
U.S. Cl.
CPC ...
H01L 23/13 (2013.01); C04B 35/587 (2013.01); C04B 37/026 (2013.01); H01L 23/15 (2013.01); H01L 35/32 (2013.01); C04B 2235/3206 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3878 (2013.01); C04B 2235/3882 (2013.01); C04B 2235/5276 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/604 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/6582 (2013.01); C04B 2235/6587 (2013.01); C04B 2235/721 (2013.01); C04B 2235/723 (2013.01); C04B 2235/77 (2013.01); C04B 2235/786 (2013.01); C04B 2235/80 (2013.01); C04B 2235/945 (2013.01); C04B 2235/9607 (2013.01); C04B 2237/125 (2013.01); C04B 2237/368 (2013.01); C04B 2237/407 (2013.01); C04B 2237/74 (2013.01); H01L 2924/0002 (2013.01); H05K 1/0306 (2013.01); H05K 3/38 (2013.01); H05K 2201/0248 (2013.01); H05K 2201/0266 (2013.01); H05K 2201/0269 (2013.01); Y10T 428/24413 (2015.01); Y10T 428/24421 (2015.01); Y10T 428/25 (2015.01); Y10T 428/259 (2015.01);
Abstract

A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate.


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