The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Sep. 03, 2009
Eduardo M. Chumbes, Andover, MA (US);
William E. Hoke, Wayland, MA (US);
Kelly P. Ip, Lowell, MA (US);
Dale M. Shaw, Groton, MA (US);
Steven K. Brierley, Westford, MA (US);
Eduardo M. Chumbes, Andover, MA (US);
William E. Hoke, Wayland, MA (US);
Kelly P. Ip, Lowell, MA (US);
Dale M. Shaw, Groton, MA (US);
Steven K. Brierley, Westford, MA (US);
Raytheon Company, Waltham, MA (US);
Abstract
A method for forming a structure on a surface of a semiconductor. The method includes: forming the material as a lower layer of the structure using a first deposition process to provide the lower layer with a first etch rate to a predetermined etchant; forming the upper layer of the structure with the material on the lower using a second deposition process to provide the upper layer with a second etch rate to the predetermined etchant higher than the first etch rate; and applying the predetermined etchant to upper layer to selectively remove the upper while leaving the lower layer.