The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Aug. 21, 2012
Applicants:
Akio Hashizume, Kyoto, JP;
Yuya Akanishi, Kyoto, JP;
Inventors:
Akio Hashizume, Kyoto, JP;
Yuya Akanishi, Kyoto, JP;
Assignee:
SCREEN Holdings Co., Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67028 (2013.01); H01L 21/0206 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02658 (2013.01); H01L 21/306 (2013.01);
Abstract
In a substrate processing apparatus (), a silicon oxide film on a main surface of a substrate () is removed in an oxide film removing part () and then a silylation material is applied to the main surface, to thereby perform a silylation process in a silylation part (). It is thereby possible to lengthen the Q time from the removal of the silicon oxide film to the formation of the silicon germanium film and reduce the temperature for prebaking in the formation of the silicon germanium film.