The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Oct. 09, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Je-Min Yu, Seoul, KR;

Sung-Min Seo, Seoul, KR;

Ho-Young Song, Hwaseong-si, KR;

Gil-Su Kim, Hwaseong-si, KR;

Jong-Min Oh, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 17/08 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 29/00 (2006.01);
U.S. Cl.
CPC ...
G11C 17/08 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); G11C 29/785 (2013.01); G11C 16/04 (2013.01); G11C 16/0483 (2013.01);
Abstract

Provided is a semiconductor memory device. The semiconductor includes a One Time Programmable (OTP) cell array, a converging circuit and a sense amplifier circuit. The OTP cell array includes a plurality of OTP cells connected to a plurality of bit lines, each bit line extending in a first direction. The converging includes a common node contacting a first bit line and a second bit line. The sense amplifier circuit includes a sense amplifier connected to the common node, the sense amplifier configured to amplify a signal of the common node.


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