The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Jun. 05, 2014
Globalfoundries Inc., Grand Cayman, KY;
Daniel Krebs, Zurich, CH;
Abu Sebastian, Adliswil, CH;
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A phase-change memory cell for storing information in a plurality of programmable cell states. The memory cell includes: a phase-change material located between a first electrode and a second electrode for applying a read voltage to the phase-change material to read a programmed cell state; and an electrically-conductive component extending in a direction between the first and second electrodes in contact with the phase-change material and arranged to present, to a cell current produced by the read voltage, a lower-resistance current path than an amorphous phase of the phase-change material in any of the plurality of programmable cell states, said current path having a length dependent on a size of said amorphous phase, wherein a volume of the electrically-conductive component is greater than about half that of said phase-change material.