The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
May. 22, 2013
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventor:
Daniel Krebs, Rueschlikon, CH;
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 11/5678 (2013.01); G11C 13/004 (2013.01); G11C 13/0009 (2013.01); G11C 13/0069 (2013.01); H01L 45/06 (2013.01); H01L 45/1206 (2013.01); H01L 45/1226 (2013.01); G11C 2013/0071 (2013.01); G11C 2013/0076 (2013.01); G11C 2213/53 (2013.01); H01L 27/2436 (2013.01);
Abstract
A method for programming gated phase-change memory cells, each with a gate, source and drain, having s≧2 programmable cell-states including an amorphous RESET state and at least one crystalline state includes applying a programming signal between the source and drain of a memory cell to program that cell to a desired cell-state; and when programming the cell from a crystalline state to the RESET state, applying a bias voltage to the gate of the cell to increase the cell resistance.