The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Apr. 30, 2009
Applicants:
Toshiyuki Sawada, Himeji, JP;
Atsushi Kishida, Himeji, JP;
Akihiko Yanagitani, Himeji, JP;
Inventors:
Assignee:
Sanyo Special Steel Co., Ltd., Hyogo-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); G11B 5/667 (2006.01); C22C 1/04 (2006.01); C22C 19/03 (2006.01); C22C 19/05 (2006.01); G11B 5/84 (2006.01); G11B 5/851 (2006.01);
U.S. Cl.
CPC ...
G11B 5/667 (2013.01); C22C 1/0433 (2013.01); C22C 19/03 (2013.01); C22C 19/058 (2013.01); C23C 14/3414 (2013.01); G11B 5/8404 (2013.01); G11B 5/851 (2013.01);
Abstract
There is disclosed a sputtering target material for producing an intermediate layer film of a perpendicular magnetic recording medium, which is capable of dramatically reducing the crystal grain size of a thin film formed by sputtering. The sputtering target material comprises, in at %, 1 to 20% of W; 0.1 to 10% in total of one or more elements selected from the group consisting of P, Zr, Si and B; and balance Ni.