The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2016

Filed:

Mar. 03, 2014
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Tetsuya Fujita, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/02 (2006.01); G05F 1/46 (2006.01); H03K 19/00 (2006.01);
U.S. Cl.
CPC ...
G05F 1/46 (2013.01); H03K 19/0016 (2013.01);
Abstract

A semiconductor integrated circuit includes a first power supply line to which an input power supply voltage is to be applied, a second power supply line configured to supply a bias voltage to a load circuit, a MOS transistor having a source-drain current path connected between the first and second power supply lines, an NMOS transistor having a source-drain current path connected between the first and second power supply lines, and a control circuit configured to generate a first control signal that is supplied to a gate electrode of the PMOS transistor at a first point in time, and a second control signal that is boosted to have a voltage level higher than the input power supply voltage and then supplied to a gate electrode of the NMOS transistor at a second point in time point that is after the first point in time.


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