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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9291899 B1

PDFFull Text
Date of Patent:
Mar. 22, 2016

Filed:

Dec. 30, 2009

Resist underlayer composition and method of manufacturing semiconductor integrated circuit device using the same

Applicants:

Hyeon-mo Cho, Uiwang-si, KR;

Sang-kyun Kim, Uiwang-si, KR;

Chang-soo Woo, Uiwang-si, KR;

Mi-young Kim, Uiwang-si, KR;

Sang-ran Koh, Uiwang-si, KR;

Hui-chan Yun, Uiwang-si, KR;

Woo-jin Lee, Uiwang-si, KR;

Jong-seob Kim, Uiwang-si, KR;

Inventors:

Hyeon-Mo Cho, Uiwang-si, KR;

Sang-Kyun Kim, Uiwang-si, KR;

Chang-Soo Woo, Uiwang-si, KR;

Mi-Young Kim, Uiwang-si, KR;

Sang-Ran Koh, Uiwang-si, KR;

Hui-Chan Yun, Uiwang-si, KR;

Woo-Jin Lee, Uiwang-si, KR;

Jong-Seob Kim, Uiwang-si, KR;

Assignee:

CHEIL INDUSTRIES, INC., Gumi-si, Kyeongsangbuk-do, KR;

Attorney:

Lee & Morse, P.C.

Primary Examiner:

Sin Lee

Int. Cl.
CPC ...
G03F 7/075 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/30 (2006.01); G03F 7/36 (2006.01); C08G 77/50 (2006.01); C08G 77/52 (2006.01); C08K 5/00 (2006.01); C08L 83/04 (2006.01); C08L 83/14 (2006.01); C09D 183/04 (2006.01); C09D 183/14 (2006.01); C08G 77/12 (2006.01); C08G 77/14 (2006.01); C08G 77/16 (2006.01); C08G 77/18 (2006.01); C08G 77/20 (2006.01); C08G 77/24 (2006.01); C08G 77/26 (2006.01); C08G 77/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0752 (2013.01); C08G 77/50 (2013.01); C08G 77/52 (2013.01); C08K 5/0008 (2013.01); C08L 83/04 (2013.01); C08L 83/14 (2013.01); C09D 183/04 (2013.01); C09D 183/14 (2013.01); G03F 7/0757 (2013.01); G03F 7/09 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/11 (2013.01); G03F 7/30 (2013.01); G03F 7/36 (2013.01); C08G 77/12 (2013.01); C08G 77/14 (2013.01); C08G 77/16 (2013.01); C08G 77/18 (2013.01); C08G 77/20 (2013.01); C08G 77/24 (2013.01); C08G 77/26 (2013.01); C08G 77/70 (2013.01);
Abstract

A resist underlayer composition and a method of manufacturing a semiconductor integrated circuit device, the composition including a solvent and an organosilane polymer, the organosilane polymer being a condensation polymerization product of at least one first compound represented by Chemical Formulae 1 and 2 and at least one second compound represented by Chemical Formulae 3 to 5.

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