The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2016
Filed:
Mar. 07, 2014
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Hirofumi Higashi, Hyogo, JP;
Yoshiharu Hidaka, Hyogo, JP;
Assignee:
JOLED INC, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23G 1/02 (2006.01); C03C 25/68 (2006.01); C09K 13/04 (2006.01); H01L 29/786 (2006.01); H01L 21/311 (2006.01); C23G 1/12 (2006.01); C09K 13/06 (2006.01); H01L 21/441 (2006.01); H01L 21/465 (2006.01);
U.S. Cl.
CPC ...
C09K 13/04 (2013.01); C09K 13/06 (2013.01); C23G 1/125 (2013.01); H01L 21/31111 (2013.01); H01L 21/441 (2013.01); H01L 21/465 (2013.01); H01L 29/786 (2013.01);
Abstract
An etching solution includes: phosphoric acid having concentration of 30% by weight to 80% by weight; nitric acid having concentration of 10% by weight or less; and surfactant having concentration of 0.0005% by weight to 0.0050% by weight, wherein the etching solution is used for etching an aluminum oxide film having film density of 2.80 g/cmto 3.25 g/cm.
Higashi, Hirofumi. (2016). Method for manufacturing a thin-film semiconductor device using an etching solution for an aluminum oxide film (U.S. Patent No. 9290695). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9290695
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile