The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Jul. 11, 2014
Applicant:

Raydium Semiconductor Corporation, Hsinchu, TW;

Inventor:

Po-Cheng Lin, Hsinchu, TW;

Assignee:

Raydium Semiconductor Corporation, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45179 (2013.01); H03F 2203/45248 (2013.01); H03F 2203/45366 (2013.01);
Abstract

A high slew rate operational amplifier including an input terminal, an output terminal, and at least one slew-rate enhancing circuit is disclosed. Each slew-rate enhancing circuit includes a first stage enhancing unit and a second stage enhancing unit. The first stage enhancing unit is coupled between the input terminal and the output terminal. The first stage enhancing unit and the second stage enhancing unit are coupled. The slew-rate enhancing circuit has a threshold voltage and the threshold voltage is related to the size of the first stage enhancing unit. When the threshold voltage is driven, the slew-rate enhancing circuit will rapidly start the second stage enhancing unit to perform a slew rate compensation on the high slew rate operational amplifier.


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