The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Nov. 01, 2013
Applicants:

Hiroshi Motomura, Miyagi, JP;

Shunichi Sato, Miyagi, JP;

Inventors:

Hiroshi Motomura, Miyagi, JP;

Shunichi Sato, Miyagi, JP;

Assignee:

RICOH COMPANY, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01S 5/42 (2006.01); G04F 5/14 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18355 (2013.01); G04F 5/14 (2013.01); G04F 5/145 (2013.01); H01S 5/18377 (2013.01); H01S 5/18394 (2013.01); H01S 5/423 (2013.01); H01S 5/1835 (2013.01); H01S 5/18347 (2013.01); H01S 5/4087 (2013.01);
Abstract

Disclosed is a surface emitting laser device, including a substrate; a lower reflecting mirror provided on the substrate; an active layer provided on the lower reflecting mirror; an upper reflecting mirror provided on the active layer, including an emitting region, laser light being emitted from the emitting region, the upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other; and an adjusting layer formed of semiconductor, provided in the emitting region between the active layer and the upper reflecting mirror, a shape of the adjusting layer in a plane parallel to a surface of the substrate including shape anisotropy in two mutually perpendicular directions.


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