The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Oct. 25, 2013
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventor:

Deok-Hoi Kim, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Samsung-ro, Giheung-Gu, Yongin-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 29/786 (2006.01); H01L 51/50 (2006.01); H01L 51/56 (2006.01); H01L 21/8234 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 51/56 (2013.01); H01L 21/823418 (2013.01); H01L 27/127 (2013.01); H01L 27/1255 (2013.01); H01L 27/3262 (2013.01); H01L 29/66757 (2013.01); H01L 29/78621 (2013.01); H01L 29/78696 (2013.01);
Abstract

An organic light emitting diode display device includes a substrate including a pixel portion and a peripheral portion, a semiconductor layer including a pixel switching semiconductor layer and a driving semiconductor layer formed on the pixel portion, and a peripheral switching semiconductor layer formed on the peripheral portion. A first gate insulating layer is formed on the semiconductor layer. A peripheral switching gate electrode is formed on the first gate insulating layer of the peripheral portion, and a pixel switching gate electrode and a driving gate electrode are formed on the first gate insulating layer of the pixel portion. A length of a peripheral switching low concentration doping region formed in the peripheral switching semiconductor layer may be larger than a length of a pixel switching low concentration doping region and a driving low concentration doping region formed in the pixel switching semiconductor layer and the driving semiconductor layer, respectively.


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