The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Sep. 06, 2013
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventor:
Kazuhiro Tomioka, Yokohama, JP;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 21/31105 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01);
Abstract
According to one embodiment, a method of manufacturing a semiconductor device includes forming a silicon nitride layer on a metal layer, forming a plasma of a gas mixture of carbon oxide and oxygen, and selectively etching the silicon nitride layer with respect to the metal layer by using the plasma of the gas mixture.
Tomioka, Kazuhiro. (2016). Method of manufacturing semiconductor device (U.S. Patent No. 9287495). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9287495
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile