The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Feb. 08, 2010
Applicants:

Hiroyuki Togawa, Tokyo, JP;

Masayuki Nakano, Tokyo, JP;

Hidetaka Yamada, Tokyo, JP;

Inventors:

Hiroyuki Togawa, Tokyo, JP;

Masayuki Nakano, Tokyo, JP;

Hidetaka Yamada, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 33/382 (2013.01); H01L 33/62 (2013.01); H01L 33/0079 (2013.01);
Abstract

A semiconductor light emitting diode comprising: a support substrate; an intermediate layer including an intermediate electrode portion, a second conductive semiconductor layer, an active layer, a first conductive semiconductor layer and an upper electrode portion sequentially disposed on the upper surface side of the support substrate in this order; and a lower electrode layer provided on the lower surface side of the support substrate, wherein: the intermediate layer has at least one intermediate electrode portion extending linearly or in an island-like shape; and the upper electrode portion and the intermediate electrode portion are disposed, in a view obtained by projecting these electrode portions, on an imaginary plane in parallel with the upper surface of the support substrate, respectively, in a positional relationship that these electrode portions, are offset from each other.


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