The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Oct. 08, 2013
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Takeshi Kawashima, Tokyo, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); B82Y 20/00 (2011.01); H01S 5/10 (2006.01); H01S 5/12 (2006.01); H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); B82Y 20/00 (2013.01); H01L 27/156 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01S 5/105 (2013.01); H01S 5/12 (2013.01); H01S 5/183 (2013.01); H01S 5/3063 (2013.01); H01S 5/34333 (2013.01); H01S 2301/17 (2013.01); H01S 2301/173 (2013.01); H01S 2304/04 (2013.01);
Abstract
A method for producing a light-emitting device includes the steps of: forming a layer containing In on a substrate in a reactor in which a Mg-containing raw material has been used; and forming an active layer including a nitride semiconductor on the layer containing In.