The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 15, 2016

Filed:

Sep. 22, 2014
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Korea Photonics Technology Institute, Gwangju, KR;

Inventors:

Jae-soong Lee, Suwon-si, KR;

Young-ho Song, Gwangju, KR;

Seong-ran Jeon, Gwangju, KR;

Seung-hwan Kim, Gwangju, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/00 (2010.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/502 (2013.01); H01L 2933/0041 (2013.01);
Abstract

Devices having nitride quantum dots and methods of manufacturing the same are provided. The device includes a nitride group material substrate, a plurality of nanorods that are formed on the nitride group material layer and are separated from each other, and a nitride quantum dot on each of the nanorods. A pyramid-shaped layer may be further formed between each of the nanorods and the nitride quantum dot. The nanorods and the nitride quantum dot are covered by an upper contact layer. A plurality of nitride quantum dots may be formed on each of the nanorods and the respective nitride quantum dots may have different sizes.


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